2SB821 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB821
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for use in audio amplifier, voltage regulator,
DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-300
mA
250
mW
125
℃
Tstg
Storage Temperature Range
-55~125
℃
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