2SB817E Datasheet, PDF (1/2 Pages) TAITRON Components Incorporated – Power Transistor (PNP)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB817E
DESCRIPTION
··Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
·Good Linearity of hFE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD1047E
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-15
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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