2SB791 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB791
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -120V(Min)
·High DC Current Gain
: h_FE= 1000(Min) @I_C= -4A
·Low Saturation Voltage
·Complement to Type 2SD970
APPLICATIONS
·Designed for medium speed and power switching
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-120
V
V_CEO
Collector-Emitter Voltage
-120
V
V_EBO
Emitter-Base Voltage
-7
V
I_C
Collector Current-Continuous
-8
A
I_CP
Collector Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-12
A
40
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}