2SB786 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB786
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -40V(Min)
·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
IB
Base Current
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
-0.1
A
5
W
150
℃
-55~150 ℃
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