English
Language : 

2SB744 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB744
DESCRIPTION
·High Collector Current -IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min)
·Complement to Type 2SD794
APPLICATIONS
·Designed for use in audio frequency amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-5
A
10
W
1
150
℃
-55~150
℃
isc Website:www.iscsemi.cn