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2SB727 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB727
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
·Complement to Type 2SD768
APPLICATIONS
·Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-10
A
40
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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