 English |
|
|
|
|
|
|
|
| 2SB722 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB722
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·High Power Dissipation-
: PC= 150W(Max)@TC=25â
·High Current Capability
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IBB
Baser Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-4
A
150
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese