2SB719 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Wide Area of Safe Operation

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB719
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -160V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SD759
APPLICATIONS
·Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
-160
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
P_C
Total Power Dissipation@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-160
V
-5.0
V
-2
A
-3
A
25
W
150
℃
-55~150 ℃
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