2SB703 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(4.0A,40W)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB703
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -80V(Min)
·DC Current Gain-
: h_FE= 40~200 @I_C= -0.5A
·Complement to Type 2SD743
APPLICATIONS
·Designed for use in audio frequency power amplifier, low
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_CM
Collector Current-Peak
-6
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1
A
40
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
3.125 ℃/W
isc Website：www.iscsemi.cn