2SB690 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB690
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -80V(Min)
·High Power Dissipation
·Complement to Type 2SD726
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-100
V
V_CEO Collector-Emitter Voltage
-80
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_CM
Collector Current-Peak
P_C
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-8
A
40
W
150
℃
-45~150 ℃
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