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| 2SB689 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – LOW FREQUENCY POWER AMPLIFIER TV VERTICAL DEFLECTION OUTPUT | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB689
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min)
·High Power Dissipation
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier and TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Total Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-5
A
1.8
W
40
150
â
-45~150 â
isc Websiteï¼www.iscsemi.cn
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