2SB688 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,120V,80W)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -120V(Min)
·Good Linearity of h_FE
·Complement to Type 2SD718
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-120
V
V_CEO
Collector-Emitter Voltage
-120
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-8
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
-0.8
A
80
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Product Specification
2SB688
isc Website：www.iscsemi.cn