2SB683 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Power Dissipation

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB683
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -100V(Min)
·High Power Dissipation
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-100
V
V_CEO Collector-Emitter Voltage
-100
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
Total Power Dissipation
@ T_a=25℃
P_C
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-5
A
1.5
W
40
150
℃
-40~150 ℃
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