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| 2SB681 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB681
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
APPLICATIONS
·For AF power amplifier use.
·Recommended for use in output stage of 80 watts power
amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature
-150
V
-6
V
-12
A
100
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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