2SB677 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB677
DESCRIPTION
·High DC Current Gain-
: h_FE = 2000(Min)@ I_C= -1A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -40V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat) = -1.5V(Max)@ I_C= -2A
APPLICATIONS
·Switching applications.
·Hammer drive, pulse motor drive applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-40
V
-5
V
-3
A
25
W
150
℃
-55~150
℃
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