2SB675 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB675
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SD635
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-60
-60
-5
-7
-0.2
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃