2SB673 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 2SB673

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB673
DESCRIPTION
·High DC Current Gain-
: h_FE = 2000(Min)@ I_C= -3A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -100V(Min)
·Low Collector Saturation Voltage-
: V_CE(sat) = -1.5V(Max)@ I_C= -3A
·Complement to Type 2SD633
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-100
V
V_CEO
Collector-Emitter Voltage
-100
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-7
A
I_BB
Base Current-DC
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-0.2
A
40
W
150
℃
-55~150 ℃
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