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| 2SB649 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB649
DESCRIPTION
·High Collector Current-IC=-1.5A
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-120V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Complement to Type 2SD669
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
-3
A
20
W
1
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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