2SB638 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2SB638
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE =1000 (Min) @ IC = -5A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -100V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
IC
ICM
Emitter-Base Voltage
Collector Current -Continuous
Collector Current-Peak
-5
V
-10
A
-15
A
IB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25℃
80
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
℃/W
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