2SB633 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(6.0A,85V,40W)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB633
DESCRIPTION
With TO-220C package
Complement to type 2SD613
High breakdown voltage :V _CEO=-85V
High current :I _C=-6A
APPLICATIONS
Recommend for 25-35W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-100
-85
-6
-6
-10
40
150
-65~150
UNIT
V
V
V
A
A
W