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| 2SB630 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SD610 | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB630
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·Complement to Type 2SD610
APPLICATIONS
·Audio frequency power amplifier applications.
·Suitable for driver of 200~300 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-3.0
A
1.5
W
25
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
1
isc & iscsemi is registered trademark
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