2SB626 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB626
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -6A
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@Tc=25℃
TJ
Junction Temperature
-6
A
80
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
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