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2SB625 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor | |||
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB625
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -5A
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@Tc=25â
TJ
Junction Temperature
-5
A
60
W
150
â
Tstg
Storage Temperature
-55~150 â
isc websiteï¼www.iscsemi.com
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