2SB612 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SD582

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB612
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -140V(Min)
·High Power Dissipation-
: P_C= 100W(Max)@T_C=25℃
·Complement to Type 2SD582
APPLICATIONS
·Recommended for 80~100W audio amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-180
V
V_CEO
Collector-Emitter Voltage
-140
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current-Continuous
-12
A
I_CM
Collector Current-Peak
-15
A
I_B
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-2
A
100
W
150
℃
-55~150 ℃
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