2SB608 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB608
DESCRIPTION
·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -180V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -0.5A
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-5
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
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