2SB604 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB604
DESCRIPTION
·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -70V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5(Max.) @IC= -4A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-70
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}