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2SB600 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB600
DESCRIPTION
With TO-3 package
High power dissipations
Complement to type 2SD555
APPLICATIONS
For use in audio and power
amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-200
-200
-5
-10
200
150
-55~200
UNIT
V
V
V
A
W