2SB568 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB568
DESCRIPTION
·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -150V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0(Max.) @IC= -0.5A
·Complement to Type 2SD478
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-5
A
Collector Power Dissipation@TC=25℃
30
PC
W
Collector Power Dissipation@Ta=25℃
1.8
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-45~150 ℃
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