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| 2SB565 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB565
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -1.0(V)(Max)@IC= -2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
APPLICATIONS
·Designed for low frequency power amplifier and power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-8
A
40
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
1
isc & iscsemi is registered trademark
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