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| 2SB563 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB563
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3A
·Complement to Type 2SD297
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-80
V
-5
V
-3.0
A
25
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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