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| 2SB551 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB551
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Typ.)@IC= -2A
·High Power Dissipation-
: PC= 25W(Max)@TC=55â
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 25â
TJ
Junction Temperature
Tstg
Storage Temperature
-3
A
25
W
150
â
-45~150 â
isc Websiteï¼www.iscsemi.cn
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