2SB550 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB550
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplification
·For low speed and power switching
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
UNIT
-100
V
-70
V
-5
V
-5
A
25
W
150
℃
-55~150
℃