2SB547 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB547
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V (Min)
·Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
·Complement to Type 2SD402
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in line-operated color TV vertical deflection
of complementary symmetry circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Peak
Total Power Dissipation
@ TC=25℃
Junction Temperature
-200
V
-150
V
-5.0
V
-2
A
-3
A
-1.5
A
30
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-55~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-a ^{Thermal Resistance,Junction to Ambient}
78
℃/W
Rth j-c ^{Thermal Resistance,Junction to Case}
4.16 ℃/W
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