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| 2SB541 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB541
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High Power Dissipation-
: PC= 100W(Max)@TC=25â
·Complement to Type 2SD388
APPLICATIONS
·Designed for audio frequency power amplifier applications.
·Suitable for output stage of 40~50 watts audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-12
A
80
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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