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| 2SB539 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB539
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High Power Dissipation-
: PC= 100W(Max)@TC=25â
·Complement to Type 2SD287
APPLICATIONS
·Designed for audio frequency power amplifier applications.
·Recommended for 70~80W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Pulse
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-15
A
100
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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