2SB526 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB526
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -80V(Min)
·Good Linearity of h_FE
·Complement to Type 2SD356
APPLICATIONS
·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-90
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
@ T_a=25℃
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.8
A
1
W
10
150
℃
-55~150
℃
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