2SB522 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB522
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max.) @IC= -3A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-60
V
-8
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@Tc=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-5
A
25
W
150
℃
-55~150 ℃
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