2SB515 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB515
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -2A
·Complement to Type 2SD331
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@Tc=25℃
-5
A
1.75
W
20
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
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