2SB508 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB508
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
·Complement to Type 2SD314
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for the output stage of 15W to 25W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-3.0
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-6.0
A
30
W
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
4.16
UNIT
℃/W
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