2SB502 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min)

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB502
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -80V(Min)
·High Power Dissipation-
: P_C= 25W(Max)@T_C=25℃
APPLICATIONS
·Designed for audio power amplifier and regulator
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-110
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-8
V
I_C
Collector Current-Continuous
-3
A
I_E
Emitter Current-Continuous
Collector Power Dissipation
@T_a=25℃
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
3
A
1.5
W
25
150
℃
-65~150 ℃
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