2SB468 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER

isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -90V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.7V(Max.) @IC= -3A
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV horizontal deflection power output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IE
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation
@Tc=25℃
Junction Temperature
-220
V
-90
V
-5
V
-10
A
10
A
32
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
INCHANGE Semiconductor
2SB468
isc website：www.iscsemi.com
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