2SB435 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB435
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -1A
·Complement to Type 2SD235
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-40
V
-40
V
-5
V
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@Tc=25℃
TJ
Junction Temperature
-0.3
A
1.5
W
25
150
℃
Tstg
Storage Temperature
-55~150 ℃
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