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| 2SB337 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB337
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.29V(Typ.) @IC= -4A
·High Power Dissipation-
: PC= 30W(Max)@TC=55â
APPLICATIONS
·Designed for audio frequency power output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCER
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-7
A
IE
Emitter Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=55â
TJ
Junction Temperature
Tstg
Storage Temperature
-1
A
30
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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