2SB1669-Z Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1669-Z
DESCRIPTION
·High DC current amplifier rate
hFE≥100@VCE=-5V,IC=-0.5A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The 2SB1669-Z is a power transistor that can be directly driven
from the output of an IC.This transistor is ideal for OA and FA
equipment such as motor and solenoid drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICP
Collector Current-Pulse
-6
A
PC
Total Power Dissipation
@ Ta=25℃
1.5
W
PC
Total Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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