2SB1649 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1649
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -10A
·Complement to Type 2SD2561
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio,series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1
A
85
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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