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| 2SB1562 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1562
DESCRIPTION
·High DC Current Gain-
: hFE= 300~1000@ (VCE= -5V , IC= -0.5A)
·Low Saturation Voltage-
: VCE(sat)= -0.5V(TYP.)@ (IC= -2A, IB=B -20mA)
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Pulse
-6
A
IBB
Base Current-Continuous
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-0.6
A
25
W
2
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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