2SB1558 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1558
DESCRIPTION
With TO-3PI package
Complement to type 2SD2387
APPLICATIONS
For power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PI) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-140
-140
-5
-8
-0.1
80
150
-55~150
UNIT
V
V
V
A
A
W