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| 2SB1531 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High DC Current Gain- : hFE= 5000(Min)@IC= -5A | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1531
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
·Complement to Type 2SD2340
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-6
A
50
W
3
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
1
isc & iscsemi is registered trademark
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