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| 2SB1530 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1530
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Complement to Type 2SD2337
APPLICATIONS
·Designed for low frequency power amplifier color TV
vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-5
A
1.5
W
20
150
â
-45~150
â
isc Websiteï¼www.iscsemi.cn
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