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| 2SB1509 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Current Switching Applications | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1509
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -8A
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD2282
APPLICATIONS
·Designed for relay drivers,high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-30
A
3
W
50
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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